型号 SI4845DY-T1-E3
厂商 Vishay Siliconix
描述 MOSFET P-CH 20V 2.7A 8-SOIC
SI4845DY-T1-E3 PDF
代理商 SI4845DY-T1-E3
产品目录绘图 DY-T1-(G)E3 Series 8-SOIC
标准包装 1
FET 型 MOSFET P 通道,金属氧化物
FET 特点 二极管(隔离式)
漏极至源极电压(Vdss) 20V
电流 - 连续漏极(Id) @ 25° C 2.7A
开态Rds(最大)@ Id, Vgs @ 25° C 210 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大) 1.5V @ 250µA
闸电荷(Qg) @ Vgs 4.5nC @ 4.5V
输入电容 (Ciss) @ Vds 312pF @ 10V
功率 - 最大 2.75W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 标准包装
其它名称 SI4845DY-T1-E3DKR
同类型PDF
SI4845DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A 8-SOIC
SI4845DY-T1-E3 Vishay Siliconix MOSFET P-CH 20V 2.7A 8-SOIC
SI4848DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC
SI4848DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC
SI4848DY-T1-E3 Vishay Siliconix MOSFET N-CH 150V 2.7A 8-SOIC
SI4848DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 8-SOIC
SI4848DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 8-SOIC
SI4848DY-T1-GE3 Vishay Siliconix MOSFET N-CH 150V 8-SOIC
SI4850EY-T1 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-E3 Vishay Siliconix MOSFET N-CH 60V 6A 8-SOIC
SI4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 8-SOIC
SI4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 8-SOIC
SI4850EY-T1-GE3 Vishay Siliconix MOSFET N-CH 60V 8-SOIC
SI4858DY-T1-E3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI4858DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC
SI4860DY-T1-E3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4860DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 11A 8-SOIC
SI4862DY-T1-E3 Vishay Siliconix MOSFET N-CH D-S 16V 8-SOIC